发明名称 |
METHOD OF FORMING A FREESTANDING SEMICONDUCTOR WAFER |
摘要 |
<p>A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.</p> |
申请公布号 |
EP2831906(A2) |
申请公布日期 |
2015.02.04 |
申请号 |
EP20130719303 |
申请日期 |
2013.03.29 |
申请人 |
SAINT-GOBAIN CRISTAUX ET DETECTEURS |
发明人 |
FAURIE, JEAN-PIERRE;BEAUMONT, BERNARD |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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