| 摘要 |
<p>A method for performing chamber-to-chamber matching includes the steps of: receiving a voltage and a current measured at an output of an RF generator of a first plasma system; and calculating a first model etch rate based on the voltage and current, and a power. The method further includes the steps of: receiving a voltage and current measured at an output of the RF generator of a second plasma system; and determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.</p> |
