| 摘要 |
The present invention relates to a thin film transistor, a method of manufacturing the same, and a method of manufacturing the back plane of a flat panel display. A method of manufacturing a thin film according to an embodiment of the present invention includes a step of forming a gate electrode on a substrate; a step of covering the gate electrode and forming a first insulting layer on the substrate; a step of performing a plasma process on the upper end of the first insulating layer by using halogen gas; a step of forming an oxide semiconductor layer to correspond to the gate electrode on the first insulating layer; and a step of forming a source electrode and a drain electrode which touches part of the semiconductor layer on the first insulating layer. |
