| 摘要 |
The present invention provides a method for manufacturing an SOI wafer, in which an insulator film is formed at least on all surfaces of a base wafer, and while protecting a first part of the insulator film on a back surface on the opposite side from a bonded surface of the base wafer, a bonded wafer before separating a bond wafer along a layer of the implanted ion is brought into contact with a liquid capable of dissolving the insulator film or exposed to a gas capable of dissolving the insulator film, such that a second part of the insulator film interposed between the bond wafer and the base wafer is etched from an outer circumferential edge of the bonded wafer and toward the center of the bonded wafer. The method can control the terrace width, prevent the occurrence of an SOI island, and inhibit warping of the SOI wafer in a bonding process with a base wafer having an insulator film formed thereon. |
