| 摘要 |
<p>The objective of the present invention is to provide a solid-state imaging device capable of improving light receiving sensitivity, and a method for manufacturing a solid-state imaging device. According to an embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes: a semiconductor layer, a reflection plate, and a device isolation region. Multiple photoelectric conversion devices are arranged with 2-D shape in the semiconductor layer. The reflection plate covers a side opposite to a side which light enters in the semiconductor layer and reflects the light. The device isolation region is formed to reach a depth that is from a side which the light of the semiconductor layer enters to the reflection plate to divide the semiconductor layer in each photoelectric conversion device, electrically separates the photoelectric conversion devices, and has the reflection side of light.</p> |
