发明名称 Display method of display device
摘要 A display method suitable for an image provided by a digital data file and/or a display method of a display device in which the image quality and power consumption are adjusted in accordance with the state of the display device or at user's request to display an image. The image is displayed on the display device in which a plurality of pixels having a pixel electrode connected to a switching element whose off-state current is reduced, using the image provided by the digital data file and data which is provided by the digital data file and is correlated to an operation of the display device.
申请公布号 US8947406(B2) 申请公布日期 2015.02.03
申请号 US201113008233 申请日期 2011.01.18
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Wakimoto Kenichi;Hayakawa Masahiko
分类号 G09G5/00;G09G3/36 主分类号 G09G5/00
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A display method of a display device, the display device comprising: a memory circuit configured to store a digital data file; a separation circuit configured to select a display mode in accordance with data which is provided by the digital data file and a value which is input into the separation circuit from an external, wherein the data is correlated to the display mode; a display control circuit operationally connected to the separation circuit, wherein, when the digital data file includes a reference frame, the separation circuit is configured to separate the reference frame, decode the reference frame to create an image of one frame, and output the image of one frame to the display control circuit; and a display panel operationally connected to the display control circuit, the display panel comprising a pixel which includes a pixel electrode and a switching element, wherein the display mode is selected from among at least a standard play mode, a simple play mode, and a still image mode, wherein the switching element comprises an oxide semiconductor layer which includes a channel formation region, and wherein an off state current of the switching element per micrometer in a channel width at room temperature is less than or equal to 1×10−17 A.
地址 Atsugi-shi, Kanagawa-ken JP