发明名称 Control circuit for sensing capacitive changes of a touch panel and a method thereof
摘要 The present invention relates to a control circuit and control method for detecting the capacitance of a touch panel. The control circuit comprises: a signal-detecting circuit for charging a sensing wire of the touch panel to obtain an intensity signal of the sensing wire; an intensity/frequency conversion unit for converting the intensity signal into a frequency signal, the frequency of which corresponds to the level of the intensity signal; and a frequency-analyzing unit for analyzing the frequency signal to obtain a signal amount of the corresponding sensing wire. The control circuit for the capacitive touch panel has a good SNR, which will not be affected or lowered by noise signals in the circuit environment, and is constituted of simple components to reduce the occupied area on the chip and lower the cost.
申请公布号 US8947395(B2) 申请公布日期 2015.02.03
申请号 US201213528865 申请日期 2012.06.21
申请人 TPK Touch Solutions Inc. 发明人 Chu Chun-Hsueh
分类号 G06F3/045;G06F3/041;G06F3/044 主分类号 G06F3/045
代理机构 代理人 Bayramoglu Gokalp
主权项 1. A control circuit for a touch panel, comprising: a signal-detecting circuit for charging a sensing wire of the touch panel to obtain an intensity signal of the sensing wire, wherein the signal-detecting circuit is a capacitance-detecting circuit for providing a power source to charge an equivalent capacitor of the sensing wire, and correspondingly providing the power source having the same magnitude to charge an internal capacitor of the capacitance-detecting circuit so as to obtain the intensity signal, wherein the voltage Vout of the intensity signal generated by the capacitance-detecting circuit is expressed by the following formula:Vout≈La⁢WbWa⁢Lb⁢(VDD-VT)⁢CXC in which La is the gate length of a transistor a of the capacitance-detecting circuit, Wa is the ate width of the transistor a, Lb is the gate length of a transistor b of the capacitance-detecting circuit, Wb is the gate width of the transistor b, VDD is the supply voltage. VT is the critical voltage of the transistor b, Cx is the sum of the equivalent capacitance of the sensing wire and a stray capacitance of the circuit board of the control circuit, and C is the internal capacitance of the capacitance-detecting circuit; an intensity/frequency conversion unit for converting the intensity signal into a frequency signal, the frequency of which corresponds to the level of the intensity signal; and a frequency-analyzing unit for analyzing the frequency signal to obtain a signal amount of the corresponding sensing wire.
地址 Taipei TW