| 发明名称 | Method for producing a semiconductor | ||
| 摘要 | A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a target depth of the semiconductor body; bonding the first side of the semiconductor body to a carrier substrate; forming an n-doped zone in the semiconductor body by heating the semiconductor body such that a pn junction arises in the semiconductor body; and removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction. | ||
| 申请公布号 | US8946872(B2) | 申请公布日期 | 2015.02.03 |
| 申请号 | US201213652772 | 申请日期 | 2012.10.16 |
| 申请人 | Infineon Technologies Austria AG | 发明人 | Mauder Anton;Schulze Hans-Joachim;Strack Helmut;Timme Hans-Joerg;Werner Wolfgang |
| 分类号 | H01L29/36;H01L21/265;H01L21/324;H01L21/263 | 主分类号 | H01L29/36 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A semiconductor device comprising: a semiconductor body having a first side and a second side; a p-doped semiconductor zone within the semiconductor body adjacent the second side; an n-doped shoulder in a region between the n-type dopant minimum and the pn junction in the n-doped semiconductor zone. | ||
| 地址 | Villach AT | ||