Method for manufacturing optical waveguide receiver and optical waveguide receiver

摘要

A method for manufacturing an optical waveguide receiver includes the steps of growing first and second stacked semiconductor layer sections, the second stacked semiconductor layer section including a core layer and a cladding layer; forming a first mask including first and second portions; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer.

主权项

1. A method for manufacturing an optical waveguide receiver, the method comprising the steps of:
growing a first stacked semiconductor layer section for a light-receiving element and a second stacked semiconductor layer section for an optical waveguide on a substrate, the first stacked semiconductor layer section including an optical absorption layer, the second stacked semiconductor layer section including a core layer and a cladding layer disposed on the core layer; forming a first mask which includes a first portion covering portions of the first and second stacked semiconductor layer sections and a second portion covering a portion of the second stacked semiconductor layer section in which a capacitor is formed; etching the first and second stacked semiconductor layer sections by using the first mask, the first and second stacked semiconductor layer sections covered with the first portion being etched in a stripe-shaped mesa structure, the second stacked semiconductor layer section covered with the second portion being etched in a terrace-shaped structure; removing the second portion from the first mask with the first portion left; selectively etching the cladding layer covered with the second portion until exposing a surface of the core layer; and sequentially forming a first metal layer, an insulating film, and a second metal layer on the core layer exposed in the step of selectively etching the cladding layer, the first metal layer, the insulating film, and the second metal layer constituting the capacitor.