Integrated circuit structure to resolve deep-well plasma charging problem and method of forming the same

摘要

During various processing operations, ions from process plasma may be transfer to a deep n-well (DNW) formed under devices structures. A reverse-biased diode may be connected to the signal line to protect a gate dielectric formed outside the DNW and is connected to the drain of the transistor formed inside the DNW.

主权项

1. An integrated circuit (IC) structure, comprising:
a deep n-well (DNW) in a substrate; a p-channel metal-oxide-semiconductor (PMOS) transistor formed inside the DNW; an NMOS transistor formed in the substrate and outside the DNW; a dissipation device in the substrate, wherein the dissipation device is connected to a substrate pickup; and an electrical path between a drain of the PMOS transistor and a gate structure of the NMOS transistor, wherein the dissipation device is also connected to the electrical path.