Semiconductor device

摘要

A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.

主权项

1. A semiconductor device, comprising:
a standard cell having three or more gate patterns extending in a first direction and arranged at an equal pitch along a second direction orthogonal to the first direction; and a diode cell located next to the standard cell in the first direction which functions as a diode, wherein the gate patterns included in the standard cell terminate near a cell boundary between the standard cell and the diode cell, with respective end portions located at a same position in the first direction and having an equal width in the second direction, and the diode cell includes:
at least one diffusion region pattern; anda plurality of gate patterns extending in the first direction and having a plurality of opposite end portions which are located near the cell boundary and opposed to the end portions of the gate patterns included in the standard cell, and the plurality of gate patterns included in the diode cell are arranged at a pitch equal to the pitch at which the gate patterns included in the standard cell are arranged in the second direction, with the plurality of opposite end portions located at a same position in the first direction and having an equal width in the second direction.