发明名称 Merged FinFETs and method of manufacturing the same
摘要 FinFETs are merged together by a metal. The method of manufacturing the FinFETs include forming a plurality of fin bodies on a substrate and merging the fin bodies with a metal. The method further includes implanting source and drain regions through the metal.
申请公布号 US8946028(B2) 申请公布日期 2015.02.03
申请号 US200912574296 申请日期 2009.10.06
申请人 International Business Machines Corporation 发明人 Chan Kevin K.;Ren Zhibin;Wang Xinhui;Wong Keith Kwong Hon
分类号 H01L21/336;H01L29/417;H01L29/66;H01L29/78 主分类号 H01L21/336
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Abate Joseph;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A method comprising: forming a plurality of fin bodies on a substrate; forming a gate structure over the plurality of fin bodies; depositing a layer of metal on the fin bodies; annealing the layer of metal to form silicide; merging the fin bodies with a metal by depositing the metal on the plurality of fin bodies and the gate structure, wherein the metal is in electrical contact with the gate structure; and implanting source and drain regions through the metal, wherein the annealing is performed prior to the merging.
地址 Armonk NY US