发明名称 |
Merged FinFETs and method of manufacturing the same |
摘要 |
FinFETs are merged together by a metal. The method of manufacturing the FinFETs include forming a plurality of fin bodies on a substrate and merging the fin bodies with a metal. The method further includes implanting source and drain regions through the metal. |
申请公布号 |
US8946028(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US200912574296 |
申请日期 |
2009.10.06 |
申请人 |
International Business Machines Corporation |
发明人 |
Chan Kevin K.;Ren Zhibin;Wang Xinhui;Wong Keith Kwong Hon |
分类号 |
H01L21/336;H01L29/417;H01L29/66;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Abate Joseph;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A method comprising:
forming a plurality of fin bodies on a substrate; forming a gate structure over the plurality of fin bodies; depositing a layer of metal on the fin bodies; annealing the layer of metal to form silicide; merging the fin bodies with a metal by depositing the metal on the plurality of fin bodies and the gate structure, wherein the metal is in electrical contact with the gate structure; and implanting source and drain regions through the metal, wherein the annealing is performed prior to the merging. |
地址 |
Armonk NY US |