发明名称 Deposition nozzle and apparatus for thin film deposition process
摘要 A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues after the precursor gas reacts with the surface of the substrate, and an air curtain passageway formed in the nozzle body and located at a peripheral side of the extraction passageway for isolating gas to be sprayed on the substrate so as to form a closed gas flow field enclosing a process reaction region between a substrate carrier and the deposition nozzle such that the residues after the precursor gas reacts with the surface of the substrate do not leak.
申请公布号 US8944347(B2) 申请公布日期 2015.02.03
申请号 US201213495889 申请日期 2012.06.13
申请人 Industrial Technology Research Institute 发明人 Huang Jen-Rong
分类号 B05B1/28;C23C16/455;C23C16/458;C23C16/48 主分类号 B05B1/28
代理机构 Rabin & Berdo, P.C. 代理人 Rabin & Berdo, P.C.
主权项 1. A deposition nozzle, comprising: a nozzle body; a precursor passageway formed at a central region of the nozzle body, for a precursor gas flow to be sprayed via the precursor passageway on a substrate such that the precursor gas reacts with a surface of the substrate; an extraction passageway formed at a peripheral side of the precursor passageway of the nozzle body, for extracting residues after the precursor gas reacts with the surface of the substrate; and an air curtain passageway formed at a peripheral side of the extraction passageway of the nozzle body, for isolating gas to be sprayed via the air curtain passageway on the substrate and a substrate carrier that carries the substrate so as to form a closed gas flow field enclosing a process reaction region on the substrate between the substrate carrier and the deposition nozzle.
地址 Hsinchu TW