摘要 |
<p>A method for establishing electrical contacts on a tubular furnace of polycrystalline silicon for direct heating, used in diffusion processes for semi-conductor prodn., using a tube deposited from the gaseous phase on a support, comprises providing at least a partial layer of highly-doped silicon, and compressing the two extremities of the tube between at least two graphite clamps surrounded by a conductive metal. the arrangement assures good high temp. constancy, and uniform temp. throughout a large part of the tube.</p> |