发明名称 Sharing local control lines across multiple planes in a memory device
摘要 Memory devices, methods for accessing a memory cell, and memory systems are disclosed. One such memory device includes a plurality of planes of memory cells. Each plane of memory cells includes series strings of memory cells that each have a select gate drain transistor. Control gates of corresponding select gates are coupled together by a shared local control line. Each of a plurality of global control lines are coupled to their corresponding local control line with only a single global select gate.
申请公布号 US8947934(B2) 申请公布日期 2015.02.03
申请号 US201113339721 申请日期 2011.12.29
申请人 Micron Technology, Inc. 发明人 Yip Aaron
分类号 G11C16/04;G11C16/06;G11C8/00;G11C8/12;G11C7/10 主分类号 G11C16/04
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A memory device comprising: a plurality of planes of memory cells, each plane having at least one series string of memory cells, each series string of memory cells having a local select gate wherein a control gate of each corresponding local select gate of the plurality of planes of memory cells is coupled to a local shared control line and only one global select gate is configured to control access for the local shared control line to a global control line.
地址 Boise ID US