发明名称 |
Sharing local control lines across multiple planes in a memory device |
摘要 |
Memory devices, methods for accessing a memory cell, and memory systems are disclosed. One such memory device includes a plurality of planes of memory cells. Each plane of memory cells includes series strings of memory cells that each have a select gate drain transistor. Control gates of corresponding select gates are coupled together by a shared local control line. Each of a plurality of global control lines are coupled to their corresponding local control line with only a single global select gate. |
申请公布号 |
US8947934(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201113339721 |
申请日期 |
2011.12.29 |
申请人 |
Micron Technology, Inc. |
发明人 |
Yip Aaron |
分类号 |
G11C16/04;G11C16/06;G11C8/00;G11C8/12;G11C7/10 |
主分类号 |
G11C16/04 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A memory device comprising:
a plurality of planes of memory cells, each plane having at least one series string of memory cells, each series string of memory cells having a local select gate wherein a control gate of each corresponding local select gate of the plurality of planes of memory cells is coupled to a local shared control line and only one global select gate is configured to control access for the local shared control line to a global control line. |
地址 |
Boise ID US |