High capacity low cost multi-stacked cross-line magnetic memory

摘要

One embodiment of the present invention includes a diode-addressable current-induced magnetization switching (CIMS) memory element including a magnetic tunnel junction (MTJ) and a diode formed on top of the MTJ for addressing the MTJ.

主权项

1. A method of manufacturing a diode-addressable current-induced magnetization switching (CIMS) memory element comprising:
Forming decoder transistors on a CMOS substrate; Depositing a first metal layer on top of the decoder transistors; Depositing a magnetic tunnel junction (MTJ) on the first metal layer, etching, depositing a second metal layer on top of the first metal layer and depositing silicon oxide on the etched second metal layer; Depositing a third metal layer on top of the silicon oxide to form an erase line; Depositing a magnetic shielding layer to form a first stack; forming a second stack on top of the first stack.