发明名称 Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer
摘要 An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.
申请公布号 US8947610(B2) 申请公布日期 2015.02.03
申请号 US201414449717 申请日期 2014.08.01
申请人 Japan Display Inc.;Panasonic Liquid Crystal Display Co. Ltd. 发明人 Asai Taro;Gotoh Jun;Oue Eiji;Asuma Hiroaki;Nakayashiki Katsumi;Kurita Makoto
分类号 G02F1/136;G02F1/1343;G02F1/133;H01L27/32;H01L27/12;H01L29/786 主分类号 G02F1/136
代理机构 Antonelli, Terry, Stout & Kraus, LLP. 代理人 Antonelli, Terry, Stout & Kraus, LLP.
主权项 1. An organic EL display device comprising: scanning lines extended in a first direction and arranged in a second direction; video signal lines extended in the second direction and arranged in the first direction; and pixels, each of which is formed in an area surrounded by one of the scanning lines and one of the video signal lines, each of the pixels comprising a TFT including a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode; wherein a source electrode connecting the semiconductor layer and the lower electrode is formed of three layers comprising a barrier metal, an Al-containing metal, and a cap metal, and wherein the barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal, wherein each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and wherein an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer.
地址 Tokyo JP