发明名称 |
Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer |
摘要 |
An organic EL display device includes scanning lines, video signal lines, and pixels, each including a TFT having a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode. A source electrode connecting the semiconductor layer and the lower electrode is formed of three layers including a barrier metal, an Al-containing metal, and a cap metal. The barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal. Each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer. |
申请公布号 |
US8947610(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201414449717 |
申请日期 |
2014.08.01 |
申请人 |
Japan Display Inc.;Panasonic Liquid Crystal Display Co. Ltd. |
发明人 |
Asai Taro;Gotoh Jun;Oue Eiji;Asuma Hiroaki;Nakayashiki Katsumi;Kurita Makoto |
分类号 |
G02F1/136;G02F1/1343;G02F1/133;H01L27/32;H01L27/12;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
Antonelli, Terry, Stout & Kraus, LLP. |
代理人 |
Antonelli, Terry, Stout & Kraus, LLP. |
主权项 |
1. An organic EL display device comprising:
scanning lines extended in a first direction and arranged in a second direction; video signal lines extended in the second direction and arranged in the first direction; and pixels, each of which is formed in an area surrounded by one of the scanning lines and one of the video signal lines, each of the pixels comprising a TFT including a semiconductor layer and an organic EL layer located between a lower electrode and an upper electrode; wherein a source electrode connecting the semiconductor layer and the lower electrode is formed of three layers comprising a barrier metal, an Al-containing metal, and a cap metal, and wherein the barrier metal is formed of a first layer in contact with the semiconductor layer and a second layer in contact with the Al-containing metal, wherein each of the first layer, the second layer, and the cap metal is formed of a metal comprising a high melting point metal, and wherein an amount of oxygen in the first layer is larger than an amount of oxygen in the second layer. |
地址 |
Tokyo JP |