发明名称 |
Integrated circuit for detecting defects of through chip via |
摘要 |
An integrated circuit that detects whether a through silicon via has defects or not, at a wafer level. The integrated circuit includes a semiconductor substrate, a through silicon via configured to be formed in the semiconductor substrate to extend to a certain depth from the surface of the semiconductor substrate, an output pad, and a current path providing unit configured to provide a current, flowing between the semiconductor substrate and the through silicon via, to the output pad during a test mode. |
申请公布号 |
US8946869(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201113041003 |
申请日期 |
2011.03.04 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Dae-Suk;Lee Jong-Chern;Kim Chul |
分类号 |
H01L29/00;H01L29/80;H01L23/48;H01L21/66;G01R31/28;H01L23/00 |
主分类号 |
H01L29/00 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. An integrated circuit comprising:
a semiconductor substrate; a silicon via extending into the semiconductor substrate to a certain depth from the surface of the semiconductor substrate; an output pad formed on the semiconductor substrate; and a current path providing unit, formed in the semiconductor substrate, configured to establish a current path and provide a current, flowing from the semiconductor substrate and through the silicon via, to the output pad during a test mode, wherein a first voltage is applied to a first well region of the semiconductor substrate during the test mode, the first voltage being greater than a schottky potential barrier formed at contact interface between a bottom of the silicon via and the semiconductor substrate. |
地址 |
Gyeonggi-do KR |