发明名称 Integrated circuit for detecting defects of through chip via
摘要 An integrated circuit that detects whether a through silicon via has defects or not, at a wafer level. The integrated circuit includes a semiconductor substrate, a through silicon via configured to be formed in the semiconductor substrate to extend to a certain depth from the surface of the semiconductor substrate, an output pad, and a current path providing unit configured to provide a current, flowing between the semiconductor substrate and the through silicon via, to the output pad during a test mode.
申请公布号 US8946869(B2) 申请公布日期 2015.02.03
申请号 US201113041003 申请日期 2011.03.04
申请人 SK Hynix Inc. 发明人 Kim Dae-Suk;Lee Jong-Chern;Kim Chul
分类号 H01L29/00;H01L29/80;H01L23/48;H01L21/66;G01R31/28;H01L23/00 主分类号 H01L29/00
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. An integrated circuit comprising: a semiconductor substrate; a silicon via extending into the semiconductor substrate to a certain depth from the surface of the semiconductor substrate; an output pad formed on the semiconductor substrate; and a current path providing unit, formed in the semiconductor substrate, configured to establish a current path and provide a current, flowing from the semiconductor substrate and through the silicon via, to the output pad during a test mode, wherein a first voltage is applied to a first well region of the semiconductor substrate during the test mode, the first voltage being greater than a schottky potential barrier formed at contact interface between a bottom of the silicon via and the semiconductor substrate.
地址 Gyeonggi-do KR