| 发明名称 | Semiconductor component with optimized edge termination | ||
| 摘要 | A semiconductor component includes a two-sided semiconductor body,an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone.;At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone.;At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone. | ||
| 申请公布号 | US8946867(B2) | 申请公布日期 | 2015.02.03 |
| 申请号 | US201214361376 | 申请日期 | 2012.09.06 |
| 申请人 | Infineon Technologies Bipolar GmbH & Co. KG | 发明人 | Barthelmess Reiner;Schulze Hans-Joachim;Kellner-Werdehausen Uwe;Lutz Josef;Basler Thomas |
| 分类号 | H01L29/861;H01L29/06;H01L29/36 | 主分类号 | H01L29/861 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A semiconductor component, comprising: a semiconductor body with a first side, a second side, and an edge, an inner zone with a basic doping of a first conduction type, a first semiconductor zone, which is disposed between the first side and the inner zone and is of the first conduction type with a doping concentration higher than that of the inner zone, a second semiconductor zone, disposed between the second side and the inner zone and is of a second conduction type complementary to the first conduction type with a doping concentration higher than that of the inner zone, at least one first edge chamfer extending at a first angle to the extension plane of a transition from the second semiconductor zone to the inner zone at least along the edge of the second semiconductor zone and the inner zone,wherein at least one buried semiconductor zone of the second conduction type with a doping concentration higher than that of the inner zone is provided between the first semiconductor zone and the inner zone, and extends substantially parallel to the first semiconductor zone,wherein a second edge chamfer with a second angle with respect to a transition from the first semiconductor zone to the inner zone is provided, which extends at least along edge of the first semiconductor zone and the buried semiconductor zone, wherein the absolute value of the second angle is smaller than the absolute value of the first angle. | ||
| 地址 | DE | ||