| 发明名称 | Image sensor | ||
| 摘要 | An image sensor may include at least one device isolation layer that passes through an epitaxial layer in a semiconductor substrate to isolate pixel regions, a light-receiving element in each pixel region, and a transistor in the active region of the semiconductor substrate partitioned by the device isolation layer. | ||
| 申请公布号 | US8946796(B2) | 申请公布日期 | 2015.02.03 |
| 申请号 | US201313751421 | 申请日期 | 2013.01.28 |
| 申请人 | Dongbu HiTek Co., Ltd. | 发明人 | Cho Jin Youn |
| 分类号 | H01L31/113 | 主分类号 | H01L31/113 |
| 代理机构 | Central California IP Group, P.C. | 代理人 | Fortney Andrew D.;Central California IP Group, P.C. |
| 主权项 | 1. An apparatus comprising: at least one device isolation layer passing through an epitaxial layer in a semiconductor substrate; a light-receiving element in each pixel region; a transistor in an active region of the semiconductor substrate, partitioned by the device isolation layer; and a buried insulating layer below the epitaxial layer in the semiconductor substrate. | ||
| 地址 | KR | ||