| 发明名称 | Ionic field effect transistor having heterogeneous triangular nanochannel and method of manufacturing the same | ||
| 摘要 | An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer. | ||
| 申请公布号 | US8946785(B2) | 申请公布日期 | 2015.02.03 |
| 申请号 | US201414181820 | 申请日期 | 2014.02.17 |
| 申请人 | Postech Academy-Industry Foundation | 发明人 | Lim Geunbae;Kim Sung Jae;Kim Bumjoo;Heo Joonseong;Kwon Hyukjin J. |
| 分类号 | G01N27/414;B82Y15/00 | 主分类号 | G01N27/414 |
| 代理机构 | Lexyoume IP Meister, PLLC | 代理人 | Lexyoume IP Meister, PLLC |
| 主权项 | 1. An ionic field effect transistor, comprising: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer. | ||
| 地址 | Pohang-Si KR | ||