Lateral devices containing permanent charge

摘要

A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.

主权项

1. A lateral semiconductor device comprising:
a first-conductivity-type source region; a second-conductivity-type body region interposed between said source region and a semiconductor drift region; said drift region being laterally interposed between said body region and a first-conductivity-type drain region; and permanent charge, embedded in at least one insulating region which vertically adjoins said drift region, which has a polarity which tends to deplete a layer of said drift region in proximity to said insulating region.