发明名称 |
Light emitting diode |
摘要 |
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped. |
申请公布号 |
US8946753(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201314096159 |
申请日期 |
2013.12.04 |
申请人 |
Tsinghua University;Hon Hai Precision Industry Co., Ltd. |
发明人 |
Zhu Zhen-Dong;Li Qun-Qing;Zhang Li-Hui;Chen Mo;Fan Shou-Shan |
分类号 |
H01L33/00;H01L33/06;H01L33/24;H01L33/20;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A light emitting diode, comprising:
a substrate; a first semiconductor layer comprising a first surface contacting the substrate and a second surface opposite to the first surface; an active layer stacked on the second surface of the first semiconductor layer; a second semiconductor layer stacked on the active layer and comprising a light emitting surface away from the active layer; a first electrode electrically connected with the first semiconductor layer; a second electrode electrically connected with the second semiconductor layer; wherein a plurality of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer, a plurality of second three-dimensional nano-structures are located on a surface of the substrate contacting the first semiconductor layer, wherein each of the plurality of first three-dimensional nano-structures and the plurality of second three-dimensional nano-structures comprises a first peak and a second peak, a first groove is defined between the first peak and the second peak, a second groove is defined between adjacent two of the first three-dimensional nano-structures and adjacent two of the second three-dimensional nano-structures, and a depth of the first groove is less than a depth of the second groove. |
地址 |
Beijing CN |