Hetero-switching layer in a RRAM device and method

摘要

A non-volatile memory device structure includes first electrodes comprising conductive silicon-containing material, a plurality of resistive switching material stacks comprising first resistive switching material and second resistive switching material overlying the first electrode, wherein the first resistive switching material comprises a first resistance switching voltage and the second resistive switching material comprises a second resistance switching voltage less than the first amplitude, second electrodes comprising metal material overlying and electrically coupled to the plurality of resistive switching material stacks, wherein a plurality of memory elements are formed from the first plurality of electrodes, the plurality of resistive switching material stacks, and the second plurality of electrodes.

主权项

1. A non-volatile memory device structure comprising:
a first plurality of electrodes, wherein each electrode from the first plurality of electrodes comprises a conductive silicon-containing material; a plurality of resistive switching material stacks overlying the plurality of first electrodes, wherein each resistive switching material stack from the plurality of resistive switching material stacks comprises a first resistive switching material and a second resistive switching material, wherein the second resistive switching material overlies the first electrode, wherein the first resistive switching material overlies and contacts the second resistive switching material, wherein the first resistive switching material is characterized by a first switching voltage having a first amplitude, wherein the second resistive switching material is characterized by a second switching voltage having a second amplitude, wherein the second amplitude is less than the first amplitude; a second plurality of electrodes, wherein each electrode from the second plurality of electrodes comprises a metal material overlying and electrically coupled to first resistive switching material of resistive switching material stacks from the plurality of resistive switching material stacks; and wherein a plurality of memory elements are formed from the first plurality of electrodes, the plurality of resistive switching material stacks, and the second plurality of electrodes.