Solid-state imaging device and electronic equipment

摘要

A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween.

主权项

1. A backside illumination type solid-state imaging device, comprising:
stacked semiconductor chips with two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit comprising a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit comprising a logic circuit and a second multi-layered wiring layer; a plurality of connection wires arranged horizontally along the first multi-layered wiring layer, each connection wire associated with a stacked semiconductor chip and which connects the first semiconductor chip unit and the second semiconductor chip unit; a first and second routing wire, each routing wire connecting adjacent connection wires; and a first shield wire configured to shield a gap between one of the routing wires and adjacent connection wires, wherein,
each connection wire includes, a penetrating connection conductor which penetrates the first semiconductor chip unit and connects to a second connection pad connected to a necessary second wire in the second multi-layered wiring layer.