Techniques for providing a direct injection semiconductor memory device

摘要

Techniques for providing a direct injection semiconductor memory device are disclosed. In one exemplary embodiment, the techniques may be realized as a direct injection semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. At least one of the plurality of memory cells may include a first region coupled to a respective bit line of the array, a second region coupled to a respective source line of the array, a body region spaced apart from and capacitively coupled to a respective word line of the array, wherein the body region may be electrically floating and disposed between the first region and the second region, and a third region coupled to a respective carrier injection line of the array, wherein the respective carrier injection line may be one of a plurality of carrier injection lines in the array that are coupled to each other.

主权项

1. A method for performing a refresh operation on a memory cell of a semiconductor memory device comprising the steps of:
performing a plurality of sub-operations on a memory cell in an array of memory cells, wherein the memory cell comprises:
a first region coupled to a respective bit line of the array;a second region coupled to a respective source line of the array;a body region spaced apart from and capacitively coupled to a respective word line of the array, wherein the body region is electrically floating and disposed between the first region and the second region; anda third region coupled to a respective carrier injection line of the array; wherein the plurality of sub-operations comprises:
a hold sub-operation to maintain a data state stored in the memory cell;a read sub-operation to read a data state stored in the memory cell; anda write sub-operation to write a data state into the memory cell.