SOI lateral bipolar transistor having multi-sided base contact and methods for making same

摘要

A Bipolar Junction Transistor with an intrinsic base, wherein the intrinsic base includes a top surface and two side walls orthogonal to the top surface, and a base contact electrically coupled to the side walls of the intrinsic base. In one embodiment an apparatus can include a plurality of Bipolar Junction Transistors, and a base contact electrically coupled to the side walls of the intrinsic bases of each BJT.

主权项

1. A method for fabricating a bipolar junction transistor (BJT) with a small base resistance on a substrate with a semiconductor layer, the method comprising:
patterning an active semiconductor region on the semiconductor layer, the active semiconductor region including an intrinsic base of the BJT, the intrinsic base including a top surface and two side walls substantially orthogonal to the top surface; forming a base contact that is electrically coupled to the side walls of the intrinsic base; forming a sacrificial gate over the intrinsic base before forming the base contact; forming a dielectric spacer about the sacrificial gate; selectively etching the sacrificial gate over the intrinsic base to create a channel, the top surface and the side walls of the intrinsic base being exposed at the channel; and wherein forming the base contact includes filling the channel with a base contact material.