Semiconductor devices and methods of fabricating the same

摘要

A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.

主权项

1. A semiconductor device, comprising:
a plurality of horizontal electrodes vertically stacked on a substrate; a plurality of first insulating layers, each of which is disposed between a corresponding pair of the plurality of horizontal electrodes; a plurality of second insulating layers, each of which is disposed between a corresponding pair of the plurality of first insulating layers and is disposed at the same vertical level as a corresponding one of the plurality of horizontal electrodes; and a contact structure penetrating the first and second insulating layers, wherein the contact structure is in contact with the first insulating layers and the second insulating layers.