| 摘要 |
<p>The present invention is to shield light of an active region using a light shield pattern, and to form also a sub electrode and a first source electrode by a single process. The present invention includes depositing one selected among molybdenum (MO), titanium (Ti), molybdenum alloy (MoTi), and copper (Cu), forming a light shield pattern by a halftone mask; and one selected among MO, Ti, MoTi, forming a sub electrode and a first source electrode which forms a double layer formed by one selected among MO, Ti, MoTi, and Cu. After that, a buffer layer, a semiconductor layer, a gate electrode, a source and a drain electrode, and an interlayer dielectric are formed. A contract hole is formed in the interlayer dielectric, and the resistance of a line can be reduced by the contact of the first source electrode and a source electrode. Another contact hole is formed in the interlayer dielectric, and a voltage drop can be minimized by contact of the sub electrode and a power line; thus reducing the consumption of power.</p> |
