| 主权项 |
1. A semiconductor device comprising:
a metal plate; one semiconductor element provided on the metal plate; and at least three lead terminals electrically connected to the semiconductor element, the semiconductor element having at least one electrode on its first surface and being provided on the metal plate so that a second surface opposite to the first surface faces the metal plate, the lead terminals being provided so as not to overlap the semiconductor element, the at least one electrode on the first surface of the semiconductor element being connected to one of or different ones of the lead terminals via an electric conductor or respective electric conductors, a joined portion of the one of or each of the different ones of the lead terminals being close to the at least one electrode, the joined portion being joined to the electric conductor or a corresponding one of the electric conductors via which the at least one electrode and the one of or the different ones of the lead terminals are connected to each other, and the at least one electrode being connected to the one of or the different ones of the lead terminals via the electric conductor or the respective electric conductors such that a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the at least one electrode being even with a joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals, the semiconductor device further comprising: an insulating spacer, the one of or the different ones of the lead terminals connected to the electric conductor or the respective electric conductors being each supported on the metal plate via the spacer, and the spacer being provided under the joined portion(s), which is/are joined to the electric conductor or the respective electric conductors, of the one of or the different ones of the lead terminals. |
