Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulses

摘要

A magnetic random access memory (MRAM) array having a magnetic tunnel junction (MTJ) to be read using a magnetic state of the MTJ, the MTJ being read by applying a current there through. Further, the MRAM array has a reference MTJ, a sense amplifier coupled to the MTJ and the reference MTJ, the sense amplifier operable to compare the voltage of the MTJ to the reference MTJ in determining the state of the MTJ; a first capacitor coupled to the sense amplifier at a first end and to ground at a second end; and a second capacitor coupled to the sense amplifier at a first end and to ground at a second end, the first capacitor storing the, wherein short voltage pulses are applied to the first end of each of the first and second capacitors when reading the MTJ thereby makes the current flowing through the MTJ there through for small time intervals thereby avoiding read disturbance to the MTJ.

主权项

1. A magnetic random access memory (MRAM) array comprising:
a magnetic tunnel junction (MTJ) to be read using a state of the MTJ, the MTJ being read by applying a current therethrough; a reference; a sense amplifier coupled to the MTJ and the reference, the sense amplifier operable to compare the voltage of the MTJ to the voltage of the reference in determining the state of the MTJ; a first storage device coupled to an end of the sense amplifier and to ground; and a second storage device coupled to another end of the sense amplifier and to ground,wherein a sequence of short voltage pulses are applied to the end of the sense amplifier and to the another end of the sense amplifier when reading the MTJ thereby making current flowing through the MTJ to flow at small time intervals and avoid read disturbance to the MTJ.