发明名称 |
Method for etching a layer on a silicon semiconductor substrate |
摘要 |
A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas. |
申请公布号 |
US8946090(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US200812452692 |
申请日期 |
2008.07.02 |
申请人 |
Robert Bosch GmbH |
发明人 |
Becker Volker;Laermer Franz;Fuchs Tino;Leinenbach Christina |
分类号 |
H01L21/302;H01L21/3065;H01L21/306;H01L21/02;B81C1/00;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
Kenyon & Kenyon LLP |
代理人 |
Kenyon & Kenyon LLP |
主权项 |
1. A method for etching an SiGe mixed semiconductor layer on a silicon semiconductor substrate, the method comprising:
adding a gas, which includes at least one of Cl2 and HCl, to the etching gas, wherein the etching gas includes at least one of ClF3 and ClF5; and dry chemical etching the SiGe mixed semiconductor layer with the aid of the etching gas and the added gas; wherein a ratio of partial pressures of the etching gas to the added gas, which includes at least one of Cl2 and HCl, is in the range of ≧1:5 to ≦5:1, and wherein the etching is a plasma-less etch based on ClF3 or ClF5 and not a plasma etch, so that no plasma reaches a process chamber with the substrate. |
地址 |
Stuttgart DE |