发明名称 |
Method for manufacturing semiconductor device |
摘要 |
The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stacked structure on a substrate; forming a source/drain region and a gate sidewall spacer at both sides of the gate stacked structure; depositing a Nickel-based metal layer at least in the source/drain region; performing a first annealing so that the silicon in the source/drain region reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; performing a second annealing so that the Ni-rich phase metal silicide is transformed into a Nickel-based metal silicide, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide and the source/drain region. The method according to the present invention performs the annealing after implanting the doping ions into the Ni-rich phase of metal silicide, thereby improving the solid solubility of the doping ions and forming a segregation region of highly concentrated doping ions, thus the SBH of the metal-semiconductor contact between the Nickel-based metal silica and the source/drain region is effectively reduced, the contact resistance is decreased, and the driving capability of the device is improved. |
申请公布号 |
US8946071(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201214364950 |
申请日期 |
2012.03.23 |
申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Luo Jun;Zhao Chao;Zhong Huicai;Li Junfeng;Chen Dapeng |
分类号 |
H01L21/00;H01L21/8238;H01L21/84;H01L29/417;H01L29/45 |
主分类号 |
H01L21/00 |
代理机构 |
Fay Kaplun & Marcin, LLP |
代理人 |
Fay Kaplun & Marcin, LLP |
主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a gate stacked structure on a substrate; forming a source/drain region and a gate sidewall spacer at both sides of the gate stacked structure; depositing a Nickel-based metal layer at least in the source/drain region; performing a first annealing so that the silicon in the source/drain region reacts with the Nickel-based metal layer to form a Ni-rich phase of metal silicide; performing an ion implantation by implanting doping ions into the Ni-rich phase of metal silicide; and performing a second annealing so that the Ni-rich phase of metal silicide is transformed into a Nickel-based metal silicide, and meanwhile, forming a segregation region of the doping ions at an interface between the Nickel-based metal silicide and the source/drain region. |
地址 |
Beijing CN |