Floating body transistor constructions, semiconductor constructions, and methods of forming semiconductor constructions

摘要

The invention includes floating body transistor constructions containing U-shaped semiconductor material slices. The U-shapes have a pair of prongs joined to a central portion. Each of the prongs contains a source/drain region of a pair of gatedly-coupled source/drain regions, and the floating bodies of the transistors are within the central portions. The semiconductor material slices can be between front gates and back gates. The floating body transistor constructions can be incorporated into memory arrays, which in turn can be incorporated into electronic systems. The invention also includes methods of forming floating body transistor constructions, and methods of incorporating floating body transistor constructions into memory arrays.

主权项

1. A floating body transistor construction comprising a U-shaped semiconductor material; the U-shape having a pair of limbs joined to a central portion; each of the limbs containing a source/drain region of a pair of gatedly-coupled source/drain regions; and the floating body of the transistor extending across the central portion between the source/drain regions, the floating body transistor being separated from each laterally adjacent floating bogy transistor by a trench filled with an electrically insulative material, the trench extending below the central portion of the transistor and into insulative material of a semiconductor-on-insulator construction.