Solid-state imaging element and manufacturing method thereof, and electronic information device

摘要

A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.

主权项

1. A solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation,
the solid-state imaging element comprising: an opposite conductivity type semiconductor region disposed in between four unit pixel sections which are adjacent to one another and which have light receiving sections having a same conductivity, a conductivity of the opposite conductivity type semiconductor region being opposite of that of the light receiving sections of the four adjacent unit pixel sections; and a pixel separating electrode above the opposite conductivity type semiconductor region, wherein a given voltage is applied to the pixel separating electrode to allow a signal charge to be shared by the four adjacent unit pixel sections.