Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

摘要

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

主权项

1. A phase-change memory device comprising:
a heat-generating electrode layer; and a first insulating layer partially covering the heat-generating electrode layer, exposing a portion of the heat-generating electrode layer, and having a pore therein; and an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting the portion of the heat-generating electrode layer exposed through the pore, and filling the pore, wherein the content (x) of antimony (Sb) in the SbxSe100-x phase-change material layer is in the range of 40 to 59.