| 摘要 |
<p>A vertical GaN transistor includes a substrate, a buffer layer on the substrate, a mask layer pattern which is formed on the buffer layer and exposes part of the buffer layer, A GaN layer on the espoused surface of the buffer and the mask layer pattern, a first drift layer which is formed on the first drift layer and exposes part of the drift layer, a second drift layer which is formed on the first drift exposed by a current blocking layer pattern, a channel layer on the current blocking layer pattern, a donor layer which is arranged on the current blocking layer pattern to surround the channel layer, a gate electrode which is formed on the second drift layer and is arranged by interposing a gate insulting layer, a source electrode arranged to be contact with the donor layer, and a drain electrode which is arranged on the GaN layer to be separated from a first drift layer.</p> |
