发明名称 Delay circuit and latency control circuit of memory, and signal delay method thereof
摘要 A delay circuit includes a delay unit configured to generate a delayed transfer signal by delaying a transfer signal corresponding to a first signal or a second signal, a distinguishment signal generation unit configured to generate a distinguishment signal which represents to what signal the transfer signal correspond between the first signal and the second signal and a delayed signal generation unit configured to output the delayed transfer signal as a first delayed signal or a second delayed signal in response to the distinguishment signal.
申请公布号 US8947956(B2) 申请公布日期 2015.02.03
申请号 US201113302267 申请日期 2011.11.22
申请人 Hynix Semiconductor Inc. 发明人 Hwang Jeong-Tae
分类号 G11C7/22 主分类号 G11C7/22
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A delay circuit, comprising: a delay unit configured to generate a delayed transfer signal by delaying a transfer signal wherein the transfer signal is enabled when a first signal or a second signal is applied; a distinguishment signal generation unit configured to generate a distinguishment signal which has a first value when the transfer signal is enabled in response to the applied first signal, and has a second value when the transfer signal is enabled in response to the applied second signal; and a delayed signal generation unit configured to output the delayed transfer signal as a first delayed signal when the distinguishment signal has the first value, or output the delayed transfer signal as a second delayed signal when the distinguishment signal has the second value.
地址 Gyeonggi-do KR