发明名称 |
Delay circuit and latency control circuit of memory, and signal delay method thereof |
摘要 |
A delay circuit includes a delay unit configured to generate a delayed transfer signal by delaying a transfer signal corresponding to a first signal or a second signal, a distinguishment signal generation unit configured to generate a distinguishment signal which represents to what signal the transfer signal correspond between the first signal and the second signal and a delayed signal generation unit configured to output the delayed transfer signal as a first delayed signal or a second delayed signal in response to the distinguishment signal. |
申请公布号 |
US8947956(B2) |
申请公布日期 |
2015.02.03 |
申请号 |
US201113302267 |
申请日期 |
2011.11.22 |
申请人 |
Hynix Semiconductor Inc. |
发明人 |
Hwang Jeong-Tae |
分类号 |
G11C7/22 |
主分类号 |
G11C7/22 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A delay circuit, comprising:
a delay unit configured to generate a delayed transfer signal by delaying a transfer signal wherein the transfer signal is enabled when a first signal or a second signal is applied; a distinguishment signal generation unit configured to generate a distinguishment signal which has a first value when the transfer signal is enabled in response to the applied first signal, and has a second value when the transfer signal is enabled in response to the applied second signal; and a delayed signal generation unit configured to output the delayed transfer signal as a first delayed signal when the distinguishment signal has the first value, or output the delayed transfer signal as a second delayed signal when the distinguishment signal has the second value. |
地址 |
Gyeonggi-do KR |