发明名称 High-voltage bulk driver using bypass circuit
摘要 This application discusses, among other things, apparatus and methods for driving the bulk of a high-voltage transistor using transistors having gates with low-voltage ratings. In an example, a bulk driver can include an output configured to couple to bulk of a high-voltage transistor, a pick circuit configured to couple the output to an input voltage at an input terminal of the high-voltage transistor or an output voltage at the output terminal of the high-voltage transistor when the high-voltage transistor is in a high impedance state, and a bypass circuit configured to couple the output of the bulk driver to the output voltage when the high-voltage transistor is in a low impedance state.
申请公布号 US8947156(B2) 申请公布日期 2015.02.03
申请号 US201314074334 申请日期 2013.11.07
申请人 Fairchild Semiconductor Corporation 发明人 Stultz Julie Lynn;Daigle Tyler
分类号 H03K3/01;H03K3/012 主分类号 H03K3/01
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A bulk driver for a high-voltage transistor, the high-voltage transistor configured to couple an input terminal with an output terminal in a low-impedance state and to isolate the input terminal from the output terminal in a high impedance state, the bulk driver comprising: an output configured to couple to a bulk of the high-voltage transistor; a pick circuit configured to couple the bulk of the high-voltage transistor to an input voltage at the input terminal or an output voltage at the output terminal when the high-voltage transistor is in the high impedance state; and a bypass circuit configured to couple the output of the bulk driver to the output voltage when the high-voltage transistor is in the low impedance state.
地址 San Jose CA US