| 摘要 |
<p>A nitride-based transistor according to an embodiment includes a mask pattern for lateral growth, a nitride buffer layer, a channel layer, a barrier layer, a source electrode, a gate electrode, and a drain electrode. The mask pattern for lateral growth can be arranged on a substrate. The nitride buffer layer can be arranged on the substrate to cover the mask pattern for lateral growth of nitride. The channel layer is arranged on the nitride buffer layer and includes a first nitride-based semiconductor. The barrier layer is arranged on the channel layer and includes a second nitride-based semiconductor which has different energy bandgap from that of the first nitride-based semiconductor. The source electrode, the gate electrode, and the drain electrode are separated on the barrier layer. The mask pattern for lateral growth of nitride is arranged to be overlapped with at least part of the gate electrode in a vertical direction.</p> |
