| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can achieve a light emitting operation using ISB polariton with high efficiency.SOLUTION: A semiconductor light emitting element 1A comprises: an active layer 20 having a luminescent layer and an injection layer in a former stage of the luminescent layer; and first and second metal layers 11, 12 which form a plasmon structure. The luminescent layer has a subband electron level structure including an upper level and a lower level and a polariton structure including an upper polariton level and a loser polariton level, and transition from the lower polariton level to the lower level produces light. A thickness T of the resonator is set at not greater than a light wavelength in the resonator and a width W of the resonator is set at when assuming that a width of the resonator when an energy spacing between the upper and lower levels and optical cutoff energy in the resonator coincide with each other is W, within a range of not less than Wand not more than 1.15×W.</p> |
