| 摘要 |
PROBLEM TO BE SOLVED: To satisfy both of the improvement of electrical properties and the improvement of workability of a protective film in a GaN-based semiconductor device.SOLUTION: A semiconductor device comprises: a p-type semiconductor layer mainly consisting of gallium nitride (GaN); an n-type semiconductor layer mainly consisting of gallium nitride (GaN) and bonded to the p-type semiconductor layer; a protective film having electrical insulation properties and covering the p-type semiconductor layer and the n-type semiconductor layer; and an electrode having conductivity and bonded to at least one of the p-type semiconductor layer and the n-type semiconductor layer by ohmic junction. The protective film comprises: a first layer consisting of aluminium oxide (AlO), adjacent to the p-type semiconductor layer and the n-type semiconductor layer and covering an edge of a pn junction surface where the p-type semiconductor layer and the n-type semiconductor layer are bonded to each other; a second layer consisting of an insulation material different from aluminium oxide (AlO) and stacked on the first layer; and an opening passing through the first layer and the second layer, and the electrode is arranged inside of the opening. |
