| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid having small dependency on the wiring and excellent in surface planarity and over-polishing tolerance after polishing, CMP technique for polishing a polished film formed on the surface of a substrate.SOLUTION: A polishing liquid contains cerium oxide particles, an acrylic acid-based polymer, an organic compound, a pH adjustment agent, and water. The acrylic acid-based polymer is obtained by polymerizing monomer components containing at least one kind selected from acrylic acid and methacrylic acid. The polymer has at least one kind selected from a group consisting of nitric acid group, a nitric acid base, a nitrous acid group, and a nitrous acid base, as a terminal group, and the pH is 4.0-5.5. |
