| 摘要 |
<p>The present invention relates to a tantalum sputtering target with a fine grain size and a method for preparing the same. The method for preparing the tantalum sputtering target with the fine grain size comprises: a step of forming a first green compact by pressurizing tantalum powder; a step of forming a second green compact through cold isostatic pressing of the first green compact; a step of forming a sintered body by sintering the second green compact in a state without being pressurized; a step of forming a rolled material by rolling the sintered body; a step of forming a vacuum heat treatment material by heat-treating the rolled material in a vacuum; and a step of leveling the vacuum heat treatment material.</p> |
