| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: forming a p-type well PW1, used for a photo diode PD, within a semiconductor substrate SB; forming an n-type semiconductor region NW, used for the photo diode PD, within the semiconductor substrate SB so as to be included in the p-type well PW1; and forming a ptype semiconductor region PR in a surface layer portion of the n-type semiconductor region NW. The ptype semiconductor region PR is formed by ion-implanting a cluster composed of multiple boron and hydrogen atoms. |
