SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve reduction in chip size of an eDRAM.SOLUTION: By performing etchback to a mask film MSK provided in a memory array region M of a DRAM in a state that a logic circuit region L is covered with a first mask PR6, a silicide block film SBL on a gate electrode G1 is selectively removed while remaining silicide block films SBL on a source and a drain of a selected MISFET. In a state that the memory array region M is covered with a second mask, silicide block films SBL on a gate electrode G2 surface and a source and a drain surfaces of a MISFET in the logic circuit region L are removed. By utilizing these silicide block films SBL, silicide films are formed on the gate electrode G1 of the selected MISFET, the gate electrode G2 of the MISFET in the logic circuit region L, and the source and the drain of the MISFET in the logic circuit region L, respectively.