| 摘要 |
<p>A static memory device includes a bit cell connected to an internal voltage line, and a power supply control circuit connected between the internal voltage line and a power supply voltage, wherein the power supply control circuit is configured to supply the power supply voltage level to the internal voltage line, and the power supply control circuit is configured to perform a write assist function that includes floating the internal voltage line during a write operation on the bit cell, the internal voltage line being floated in response to a signal of a mode control signal group.</p> |
