| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that effectively suppresses discharge.SOLUTION: A plasma processing apparatus 100 of the present invention comprises: an electrostatic chuck base portion 22; a first gas passage 3 that is made of a metal and that is provided penetrating the electrostatic chuck base portion 22 so as to supply He gas to a substrate to be processed; a second gas passage 4 made of a dielectric; a metal housing 1 that covers the first gas passage 3 and the second gas passage 4; a high frequency power supply 5 that applies high frequency power; and a blocking member 6 that is formed of a resin and that blocks the vicinity of a boundary between the first gas passage 3 and the second gas passage 4. The metal housing 1 is grounded, and the blocking member 6 has sections of the blocking member 6 which are perpendicular to a passage-axial direction of the first gas passage 3 or the second gas passage 4. The blocking member 6 has, in at least one of the sections, a circle centered on a passage axis of the first gas passage 3 or the second gas passage 4, and blocks the inside of the circle, which has an area that is 10% or more of the sectional area of the first gas passage 3 or the second gas passage 4. |
