| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method that can prevent a problem in which film thickness uniformity on a substrate decreases with time by making not only a vapor deposition rate, but also a vapor deposition particle distribution (n value of a cos-(n)th power distribution) constant.SOLUTION: A vapor deposition apparatus comprises a double crucible structure including an outer crucible and an inner crucible, and inner crucible moving means, and performs vapor-deposition-rate constant control and vapor-deposition-particle-distribution constant control. For example, since a vapor deposition rate and a vapor deposition particle distribution are determined by a surface position and a surface temperature of an in-crucible vapor deposition material, control is only so performed that they become constant. Or the vapor deposition distribution is normally flatter (smaller (n) value) as the surface position is higher and the surface temperature is higher. For the purpose, the double crucible structure comprises the outer crucible and the inner crucible, and constant control over the surface position and constant control over the surface temperature may be performed by moving the inner crucible.</p> |
