| 摘要 |
PROBLEM TO BE SOLVED: To provide a 3D through-electrode semiconductor substrate having a TTV (Total Thickness Variation) value of 0.1 μm or less and an in-plane uniformity of 3.0% or less.SOLUTION: In the middle of a conventional substrate flattening and grinding process using a numerical control grinding device 1 with a mechanism for tilting an axis angle of a cup wheel type grinding stone, a plurality of thicknesses (t) of the substrate measured in the flattening process are transmitted to a memory (ROM) of the numerical control device, and a correction flattening and grinding process of changing a grindstone axis moving amount and a grindstone axis tilting angle in consideration of a TTV value and an in-plane uniformity value calculated by an operation part, that are fed back to the numerical control grinding device 1, is added. |
